Thin-light emitting diode lamp, and method of manufacturing the same

ABSTRACT

A thin-type light emitting diode lamp includes a blue light emitting diode chip ( 6 ) disposed at a substantial center of an inner bottom surface of a groove-shaped recess ( 3 ) formed at an end surface and having a thin elongated rectangular opening, a red light conversion layer ( 7 ) covering the blue light emitting diode chip ( 6 ) and made of a light-transmitting synthetic resin containing powder of a red fluorescent material which emits red light when excited by blue light emitted from the blue light emitting diode chip, and a green light conversion layer ( 10 ) made of a light-transmitting synthetic resin containing powder of a green fluorescent material which emits green light when excited by the blue light. The light emitting diode lamp further includes a light transmitting layer ( 9 ) intervening between the red light conversion layer ( 7 ) and the green light conversion layer ( 10 ). The light transmitting layer contains neither the red fluorescent material nor the green fluorescent material or contains the red fluorescent material or the green fluorescent material only by a small amount.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. Ser. No. 12/160,051 filedJul. 3, 2008, which is a U.S. National Stage of PCT/JP2006/326047, filedDec. 27, 2006, which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a thin-type light emitting diode lampused for a backlight source of a liquid crystal display device, forexample, and also to a method of manufacturing such a lamp.

BACKGROUND ART

Examples of conventional thin-type light emitting diode lamp aredisclosed in Patent Document 1 and Patent Document 2. In these lightemitting diode lamps, a groove-shaped recess having an elongatedrectangular opening is formed at the front end surface of the lamp body.A light emitting diode chip is mounted at a substantial center of theinner bottom surface of the groove-shaped recess. The side surfaces ofthe groove-shaped recess are inclined to cause the light from the lightemitting diode chip to be emitted from the elongated rectangularopening.

In recent years, a GaN-based light emitting diode chip which emits bluelight has been developed. The blue light emitting diode chip is known toexhibit high brightness. As disclosed in Patent Document 3 and PatentDocument 4, such a blue light emitting diode chip can be used for awhite light emitting device designed to emit white light.

The conventional white light emitting device disclosed in thesedocuments includes a red light conversion layer made of alight-transmitting synthetic resin containing powder of a redfluorescent material which emits red light when excited by blue light,and a green light conversion layer made of a light-transmittingsynthetic resin containing powder of a green fluorescent material whichemits green light when excited by blue light. With this arrangement, bycausing the blue light emitted from the blue light emitting diode chipto pass through the red light conversion layer, red light is emittedfrom the red light conversion layer. By causing the blue light afterpassing through the red light conversion layer to passe through thegreen light conversion layer, green light is emitted from the greenlight conversion layer. The blue light emitted from the blue lightemitting diode chip, the red light emitted from the red light conversionlayer and the green light emitted from the green light conversion layerare combined to produce white light for emission.

In the structure disclosed in Patent Document 3, the green lightconversion layer is formed in close contact with the obverse surface ofthe blue light emitting diode chip, and the red light conversion layeris formed in close contact with the outer surface of the green lightconversion layer. In the structure disclosed in Patent Document 4, a redlight conversion layer and a green light conversion layer formed inclose contact with the outer surface of the red light conversion layerare arranged at a position separate from the blue light emitting diodechip.

By applying the above-described white light emitting device to athin-type light emitting diode lamp having the above-describedstructure, a thin-type light emitting diode lamp which emits white lightis obtained. Specifically, in the thin-type light emitting diode lamp, ablue light emitting diode chip is mounted at a substantial center of theinner bottom surface of the groove-shaped recess. The blue lightemitting diode chip is covered with a red light conversion layer, and agreen light conversion layer is formed on the outer side of the redlight conversion layer. With this arrangement, white light is emittedfrom the elongated rectangular opening of the groove-shaped recess ofthe thin-type light emitting diode lamp.

-   Patent Document 1: JP-A-2001-36147-   Patent Document 2: JP-A-2005-317820-   Patent Document 3: JP-A-2002-510866-   Patent Document 4: JP-A-2005-228996

The wavelength of blue light is about 450 nm, which is the shortest. Thewavelength of green light is about 530 nm. The wavelength of red lightis about 650 nm, which is the longest. Light having a shorter wavelengthis more likely to be absorbed than light having a longer wavelength.Thus, when a red light conversion layer and a green light conversionlayer are arranged in close contact with each other, part of the greenlight emitted from the green light conversion layer, which has a shorterwavelength, is directly absorbed by the red light conversion layer.Thus, the amount of the green light emitted from the green lightconversion layer reduces by as much as the amount absorbed by the redlight conversion layer. The green light absorbed by the red lightconversion layer is converted into thermal energy to be consumed.

Thus, in the above-described arrangement, to make the light obtained byconversion close to white light, the amount of green light needs to beincreased. For this purpose, the content of the green fluorescentmaterial in the green light conversion layer needs to be increased.Further, since green light is absorbed, the brightness of the whitelight deteriorates correspondingly.

Moreover, since the groove-shaped recess is elongated, the path of lightemitted from the blue light emitting diode chip becomes longer asprogressing away from the blue light 30, emitting diode chip in thelongitudinal direction of the groove-shaped recess. Thus, of the lightemitted from the blue light emitting diode chip, the part to be emittedfrom the portions adjacent to the two ends of the elongated rectangularopening of the groove-shaped recess is not sufficiently converted intored light by the red light conversion layer, because it travels througha relatively long path. As a result, the white light emitted fromdifferent portions of the elongated rectangular opening of the groovehas different tones, which is not desirable.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

A technical object of the present invention is to provide a thin-typelight emitting diode lamp capable of solving the above-describedproblems and a manufacturing method of such a lamp.

Means for Solving the Problems

According to a first aspect of the present invention, there is provideda thin-type light emitting diode lamp comprising a lamp body includingan end surface formed with a groove-shaped recess having a thinelongated rectangular opening, a blue light emitting diode chip disposedat a substantial center of an inner bottom surface of the recess of thelamp body, a red light conversion layer covering the blue light emittingdiode chip and made of a light-transmitting synthetic resin containingpowder of a red fluorescent material which emits red light when excitedby blue light emitted from the blue light emitting diode chip, and agreen light conversion layer made of a light-transmitting syntheticresin containing powder of a green fluorescent material which emitsgreen light when excited by the blue light. The light emitting diodelamp further comprises a light transmitting layer intervening betweenthe red light conversion layer and the green light conversion layer. Thelight transmitting layer contains neither the red fluorescent materialnor the green fluorescent material or contains the red fluorescentmaterial or the green fluorescent material by an amount smaller thanthat contained in the red light conversion layer or the green lightconversion layer.

Preferably, in the thin-type light emitting diode lamp as set forth inclaim 1, the light transmitting layer may comprise a space.

Preferably, in the thin-type light emitting diode lamp as set forth inclaim 1, the light transmitting layer may be made of alight-transmitting synthetic resin.

Preferably, in the thin-type light emitting diode lamp as set forth inany one of claims 1-3, the red light conversion layer may be thicker atportions contacting two side surfaces of the blue light emitting diodechip which extend perpendicularly to a longitudinal direction of therecess than at portions contacting other two side surfaces of the bluelight emitting diode chip which extend in the longitudinal direction ofthe recess.

According to a second aspect of the present invention, there is provideda method of making a thin-type light emitting diode lamp. The methodcomprises a first step of mounting a blue light emitting diode chip at asubstantial center of an inner bottom surface of a groove-shaped recessformed at an end surface of a lamp body, a second step of forming a redlight conversion layer to cover the blue light emitting diode chip byusing a light-transmitting synthetic resin containing powder of a redfluorescent material which emits red light when excited by blue lightemitted from the blue light emitting diode chip, and a third step offorming a green light conversion layer on an outer side of the red lightconversion layer by using a light-transmitting synthetic resincontaining powder of a green fluorescent material which emits greenlight when excited by the blue light. The second step comprises the stepof injecting a light-transmitting synthetic resin in a liquid statecontaining powder of a red fluorescent material into the recess, thestep of maintaining a posture in which an opening of the recess isoriented upward, and the step of hardening the light-transmittingsynthetic resin in the liquid state while keeping the posture.

According to a third aspect of the present invention, there is provideda method of making a thin-type light emitting diode lamp. The methodcomprises a first step of forming a red light conversion layer to covera blue light emitting diode chip by using a light-transmitting syntheticresin containing powder of a red fluorescent material which emits redlight when excited by blue light emitted from the blue light emittingdiode chip, a second step of mounting the blue light emitting diode chipat a substantial center of an inner bottom surface of a groove-shapedrecess formed at an end surface of a lamp body, and a third step offorming a green light conversion layer on an outer side of the red lightconversion layer by using a light-transmitting synthetic resincontaining powder of a green fluorescent material which emits greenlight when excited by the blue light. In the first step, the red lightconversion layer is formed to be thicker at portions contacting two sidesurface of the blue light emitting diode chip which extendperpendicularly to a longitudinal direction of the recess than atportions contacting other two side surfaces of the blue light emittingdiode chip which extend in the longitudinal direction of the recess.

Preferably, in the method of making a thin-type light emitting diodelamp as set forth in claim 5 or 6, the third step may comprise the stepof injecting a light-transmitting synthetic resin in a liquid statecontaining powder of a green fluorescent material into the groove-shapedrecess, the step of maintaining a posture in which an opening of thegroove-shaped recess is oriented downward, and the step of hardening thelight-transmitting synthetic resin in the liquid state while keeping theposture.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a thin-type light emitting diodelamp according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along lines II-II in FIG. 1.

FIG. 3 is a sectional view taken along lines in FIG. 2.

FIG. 4 is a sectional view taken along lines IV-IV in FIG. 3.

FIG. 5 is a perspective view showing a blue light emitting diode chipcovered with a red light conversion layer.

FIG. 6 is a sectional view taken along lines VI-VI in FIG. 5.

FIG. 7 is a sectional view taken along lines VII-VII in FIG. 5.

FIG. 8 is a sectional view showing a thin-type light emitting diode lampaccording to a second embodiment of the present invention.

FIG. 9 is a sectional view showing a thin-type light emitting diode lampaccording to a third embodiment of the present invention.

FIG. 10 shows a first step of a method for manufacturing a lightemitting diode lamp according to the first embodiment.

FIG. 11 shows a second step of the method for manufacturing a lightemitting diode lamp according to the first embodiment.

FIG. 12 shows a third step of the method for manufacturing a lightemitting diode lamp according to the first embodiment.

FIG. 13 shows a first step of a method for manufacturing a lightemitting diode lamp according to the third embodiment.

FIG. 14 shows a second step of the method for manufacturing a lightemitting diode lamp according to the third embodiment.

FIG. 15 shows a third step of the method for manufacturing a lightemitting diode lamp according to the third embodiment.

FIG. 16 shows a fourth step of the method for manufacturing a lightemitting diode lamp according to the third embodiment.

FIG. 17 shows a third step of anther method for manufacturing a lightemitting diode lamp according to the third embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

Preferred embodiments of the present invention will be described belowwith reference to the accompanying drawings.

FIG. 1 is a perspective view showing a thin-type light emitting diodelamp according to a first embodiment of the present invention. FIG. 2 isa sectional view taken along lines II-II. FIG. 3 is a sectional viewtaken along lines in FIG. 2. FIG. 4 is a sectional view taken alonglines IV-IV in FIG. 3.

In FIGS. 1-4, the reference sign 1 indicates a lamp body made of aninsulating material such as synthetic resin. The reference sign 2indicates a transparent light guide plate arranged on a reverse surfaceof a non-illustrated liquid crystal display device. The light guideplate guides the light emitted from a thin-type light emitting diodelamp serving as a backlight source in this embodiment.

The lamp body 1 includes a front end surface la facing the light guideplate 2 and formed with a groove-shaped recess 3 having a thin elongatedrectangular opening. A pair of lead terminals 4 and 5 made of a metalplate are embedded in the lamp body 1 to be exposed at the inner bottomsurface of the groove-shaped recess 3. A diode chip 6 for emitting bluelight is disposed at a substantial center of the inner bottom surface ofthe groove-shaped recess 3.

As shown in FIGS. 2-4, the side surfaces of the blue light emittingdiode chip 6 are covered with a red light conversion layer 7. Theopening of the groove-shaped recess 3 is entirely covered with a greenlight conversion layer 10. A light transmitting layer 9 is providedbetween the red light conversion layer 7 and the green light conversionlayer 10 within the groove-shaped recess 3.

The red light conversion layer 7 is made of a light-transmittingsynthetic resin containing powder of a red fluorescent material whichemits red light when excited by the blue light emitted from the bluelight emitting diode chip 6. The green light conversion layer 10 is madeof a light-transmitting synthetic resin containing powder of a greenfluorescent material which emits green light when excited by the bluelight emitted from the blue light emitting diode chip 6. The lighttransmitting layer 9 is made of a light-transmitting synthetic resinwhich contains neither a red fluorescent material nor a greenfluorescent material or contains only a small amount of fluorescentmaterial.

FIG. 5 is a perspective view showing the blue light emitting diode chip6 whose side surfaces are covered with the red light conversion layer 7.In this embodiment, as shown in FIG. 5, the blue light emitting diodechip 6 whose side surfaces are covered with the red light conversionlayer 7 is mounted at a substantial center of the inner bottom surfaceof the groove-shaped recess 3. FIG. 6 is a sectional view taken alonglines VI-VI in FIG. 5. FIG. 7 is a sectional view taken along linesVII-VII in FIG. 5.

For instance, as shown in FIGS. 6 and 7, the blue light emitting diodechip 6 comprises a transparent n-type semiconductor layer 6 a made ofe.g. an n-type SiC crystal substrate and having a relatively largethickness, a p-type semiconductor layer 6 b, a light emitting layer 6 cfor emitting blue light, an n-electrode 6 d and a p-electrode 6 e. Thep-type semiconductor layer 6 b is arranged on the lower surface of then-type semiconductor layer 6 a via the light emitting layer 6 c. Then-electrode 6 d is formed on the upper surface of the n-typesemiconductor layer 6 a. The p-electrode 6 e is formed on the lowersurface of the p-type semiconductor layer 6 b.

As shown in FIG. 5, the blue light emitting diode chip 6 is so arrangedthat the two opposite side surfaces 6′ extend generally in parallel withthe longitudinal direction of the groove-shaped recess 3 whereas theother two opposite side surfaces 6″ extend generally perpendicularly tothe longitudinal direction of the groove-shaped recess 3. As shown inFIGS. 2-4, the p-electrode 6 e on the lower surface of the blue lightemitting diode chip 6 is electrically connected to the lead terminal 4by boning (die bonding). The n-electrode 6 d on the upper surface iselectrically connected to the lead terminal 5 by wire bonding using athin metal wire 8.

As shown in FIGS. 5-7, the thickness of the red light conversion layer 7covering the side surfaces of the blue light emitting diode chip 6differs between the portion on the side surfaces 6′ and the portion onthe side surfaces 6″. Specifically, the red light conversion layer 7 hasa relatively small thickness S1 at the portion on each of the sidesurfaces 6′ while having a thickness S2, which is larger than thethickness S2, at the portion on each of the side surfaces 6″.

With this arrangement, by causing the blue light emitted from the bluelight emitting diode chip 6 to pass through the red light conversionlayer 7, red light is emitted from the red light conversion layer 7.Further, by causing the blue light after passing through the red lightconversion layer 7 to pass through the green light conversion layer 10,green light is emitted from the green light conversion layer 10. Theblue light emitted from the blue light emitting diode chip 6, the redlight emitted from the red light conversion layer 7 and the green lightemitted from the green light conversion layer 10 are combined to producewhite light, which is emitted from the opening of the groove-shapedrecess 3 toward the light guide plate 2.

With the above-described structure, the blue light traveling from theblue light emitting diode chip 6 toward the two ends of the elongatedrectangular opening of the groove-shaped recess 3 passes through thethicker portion of the red light conversion layer 7 which has thethickness S2. Thus, the conversion of the blue light into red light bythe red light conversion layer 7 is sufficiently performed. As a result,the tone of the white light emitted from the elongated rectangularopening of the groove-shaped recess 3 is uniform at any point.

Further, since the light transmitting layer 9 intervenes between the redlight conversion layer 7 and the green light conversion layer 10, thered light conversion layer 7 and the green light conversion layer 10 arenot held in close contact with each other. This arrangement reliablyreduces the possibility that the green light emitted from the greenlight conversion layer 10 is directly absorbed by the red lightconversion layer. Since the absorption of the green light emitted fromthe green light conversion layer 10 reduces in this way, the content ofthe green fluorescent material in the green light conversion layer 10can be reduced. Further, since the reduction in amount of green light issuppressed, the brightness of the emitted white light is enhanced.

FIG. 8 is a sectional view showing a thin-type light emitting diode lampaccording to a second embodiment of the present invention. In the lightemitting diode lamp of this embodiment, the light transmitting layer 9between the red light conversion layer 7 and the green light conversionlayer 10 is not made of a light-transmitting synthetic resin butcomprises a space. With this arrangement, since a light-transmittingsynthetic resin for forming the light transmitting layer 9 between thered light conversion layer 7 and the green light conversion layer 10 isnot necessary, the material cost reduces. The structure of otherportions is the same as that of the first embodiment. In this embodimentagain, the red light conversion layer 7 and the green light conversionlayer 10 are not held in close contact with each other. Thus, the sameadvantages as those of the first embodiment are obtained.

FIG. 9 is a sectional view showing a thin-type light emitting diode lampaccording to a third embodiment of the present invention. In this lightemitting diode lamp, the side surfaces of the blue light emitting diodechip 6 are not covered with the red light conversion layer 7 in advance.Specifically, in this embodiment, a blue light emitting diode chip 6 byitself is disposed at a substantial center of the inner bottom surfaceof a groove-shaped recess 3, and then a red light conversion layer 7 isformed to cover the blue light emitting diode chip. With thisarrangement, it is not necessary to form the red light conversion layer7 to cover the side surfaces of the blue light emitting diode chip 6 inadvance. Further, by employing the method for manufacturing a thin-typelight emitting diode lamp which will be described later, themanufacturing process is simplified. The structure of other portions isthe same as that of the first embodiment. In this embodiment again, thered light conversion layer 7 and the green light conversion layer 10 arenot held in close contact with each other. Thus, the possibility thatthe green light is directly absorbed by the red light conversion layeris reliably reduced.

FIGS. 10-12 show a method for manufacturing a thin-type light emittingdiode lamp according to the first embodiment.

First, in this manufacturing method, a blue light emitting diode chip 6,which is covered with a red light conversion layer 7 in advance, isdisposed at a substantial center of the inner bottom surface of thegroove-shaped recess 3 of a lamp body 1, as shown in FIG. 10. In thisprocess, the p-electrode 6 e on the lower surface of the blue lightemitting diode chip 6 is connected to the lead terminal 4 by diebonding. The n-electrode 6 d on the upper surface is connected to thelead terminal 5 by wire bonding using a metal wire 8.

Then, as shown in FIG. 11, with the opening of the groove-shaped recess3 oriented upward, an appropriate amount of light-transmitting syntheticresin 10′ in a liquid state containing powder of a green fluorescentmaterial is injected into the groove-shaped recess 3. In this process,the light-transmitting synthetic resin 10′ is so injected as to coverthe entirety of the blue light emitting diode chip 6 and red lightconversion layer 7.

Then, as shown in FIG. 12, the opening of the groove-shaped recess 3 isoriented downward, and this posture is maintained for an appropriatetime. It is to be noted that the light-transmitting synthetic resin 10′in a liquid state needs to have such viscosity as to prevent thedropping even in this posture. The powder of the green fluorescentmaterial has a higher specific gravity than that of thelight-transmitting synthetic resin. Thus, by maintaining this posture,the powder of the green fluorescent material contained in thelight-transmitting synthetic resin 10′ precipitates due to thedifference in specific gravity. When the precipitation is completed orsubstantially completed, the light-transmitting synthetic resin 10′ ishardened. The hardening may be performed by drying the solvent used forliquefying the light-transmitting synthetic resin 10′ and ultravioletradiation or heating to harden the light-transmitting synthetic resin10′.

As shown in FIG. 12, by the above-described process, a green lightconversion layer 10 a containing powder of the green fluorescentmaterial is formed at a portion furthest from the blue light emittingdiode chip 6. Further, a light transmitting layer 9 a which containsneither a red fluorescent material nor a green fluorescent material orcontains only a small amount of green fluorescent material is formedbetween the green light conversion layer 10 a and the red lightconversion layer 7.

With the manufacturing method, the thin-type light emitting diode lampaccording to the first embodiment is formed easily, so that themanufacturing cost reduces.

FIGS. 13-16 show a method for manufacturing a thin-type light emittingdiode lamp according to the third embodiment.

First, in this manufacturing method, a blue light emitting diode chip 6by itself is disposed at a substantial center of the inner bottomsurface of the groove-shaped recess 3 of a lamp body 1. In this process,the p-electrode 6 e on the lower surface of the blue light emittingdiode chip 6 is connected to the lead terminal 4 by die bonding. Then-electrode 6 d on the upper surface is connected to the lead terminal 5by wire bonding using a metal wire 8.

Then, as shown in FIG. 13, with the opening of the groove-shaped recess3 oriented upward, an appropriate amount of light-transmitting syntheticresin 7′ in a liquid state containing powder of a red fluorescentmaterial is injected into the groove-shaped recess 3. In this process,the light-transmitting synthetic resin 7′ is so injected as to cover theentirety of the blue light emitting diode chip 6. As shown in FIG. 13,due to the surface tension by the viscosity, the light-transmittingsynthetic resin 7′ in a liquid state forms a shape like a convex lensswelling at the center.

Then, this posture is maintained for an appropriate time. The powder ofthe red fluorescent material also has a higher specific gravity thanthat of the light-transmitting synthetic resin. Thus, as shown in FIG.14, by maintaining this posture, the powder of the red fluorescentmaterial contained in the light-transmitting synthetic resin 7′precipitates due to the difference in specific gravity. When theprecipitation is completed or substantially completed, thelight-transmitting synthetic resin 7′ is hardened.

As shown in FIG. 14, by the above-described process, the blue lightemitting diode chip 6 is covered with the red light conversion layer 7a, and a light transmitting layer 9 b which contains neither a redfluorescent material nor a green fluorescent material or contains only asmall amount of red fluorescent material is formed on the outer side ofthe red light conversion layer 7 a.

Then, as shown in FIG. 15, with the opening of the groove-shaped recess3 oriented upward, an appropriate amount of light-transmitting syntheticresin 10′ in a liquid state containing powder of a green fluorescentmaterial is injected into the groove-shaped recess 3. In this process,the light-transmitting synthetic resin 10′ is so injected as to coverthe entirety of the blue light emitting diode chip 6, red lightconversion layer 7 and light transmitting layer 9 b.

Then, as shown in FIG. 16, the opening of the groove-shaped recess 3 isoriented downward, and this posture is maintained for an appropriatetime. It is to be noted that the light-transmitting synthetic resin 10′in a liquid state needs to have such viscosity as to prevent thedropping even in this posture. The powder of the green fluorescentmaterial has a higher specific gravity than that of thelight-transmitting synthetic resin. Thus, by maintaining this posture,the powder of the green fluorescent material contained in thelight-transmitting synthetic resin 10′ precipitates due to thedifference in specific gravity. When the precipitation is completed orsubstantially completed, the light-transmitting synthetic resin 10′ ishardened.

As shown in FIG. 16, by the above-described process, a green lightconversion layer 10 a containing powder of green fluorescent material isformed at a portion furthest from the blue light emitting diode chip 6.Further, a light transmitting layer 9 a which contains neither a redfluorescent material nor a green fluorescent material or contains only alittle amount of green fluorescent material is formed between the greenlight conversion layer 10 a and the light transmitting layer 9 b.

With the above-described manufacturing method, the thin-type lightemitting diode lamp according to the third embodiment is formed easily,so that the manufacturing cost reduces.

In the manufacturing method for the third embodiment, instead ofinjecting the light-transmitting synthetic resin 10′ as shown in FIG.15, a light-transmitting synthetic resin containing powder of a greenfluorescent material may be applied to the outer surface of the lighttransmitting layer 9 b. In this case, the hardening process is performedimmediately after the application of the light-transmitting syntheticresin. By this process, as shown in FIG. 17, a green light conversionlayer 10 a is easily formed at a portion furthest from the blue lightemitting diode chip 6.

In each of the foregoing embodiments, the paired lead terminals 4 and 5embedded in the lamp body 1 may be replaced with an end surface 1 a ofthe lamp body and an electrode film provided at the inner surface of thegroove-shaped recess 3.

1-7. (canceled)
 8. A semiconductor light emitting lamp comprising: alamp body formed with an elongated recess that includes a bottom surfaceand an opening; a blue light emitting element disposed at the bottomsurface; a light-transmitting resin covering the blue light emittingelement; and a green fluorescent material and a red fluorescent materialboth contained in the light-transmitting resin; wherein a concentrationof the red fluorescent material is higher at a position close to thebottom surface and adjacent to the blue light emitting element than at asurface of the light-transmitting resin, and the concentration of thered fluorescent material is higher at a position adjacent to the bluelight emitting element than at a position on the bottom surface andclose to an end of the recess.
 9. The light emitting lamp according toclaim 8, wherein the red fluorescent material and the green fluorescentmaterial have mutually different concentration distributions.
 10. Thelight emitting lamp according to claim 8, further comprising a leadconnected to the blue light emitting element, wherein the bottom surfaceis flat, and the lead includes an exposed portion located at the bottomsurface.
 11. The light emitting lamp according to claim 10, wherein theblue light emitting element is bonded to the exposed portion of thelead.
 12. The light emitting lamp according to claim 8, wherein the bluelight emitting element includes a first side surface and a second sidesurface, the first side surface being perpendicular to a longitudinaldirection of the recess, the second side surface being parallel to thelongitudinal direction, and wherein the light-transmitting resinincludes a first portion and a second portion, the first portion beingin contact with the first side surface, the second portion being incontact with the second side surface, the first portion being greater inthickness than the second portion.
 13. The light emitting lamp accordingto claim 8, wherein the green fluorescent material is distributedoverall in the opening of the recess.
 14. A method of making asemiconductor light emitting lamp, the method comprising: preparing alamp body formed with an elongated recess that includes a bottom surfaceand an opening; arranging a blue light emitting element on the bottomsurface; supplying light-transmitting resin in a liquid state into therecess while the opening is kept oriented upward, so that the blue lightemitting element is covered with the light-transmitting resin, whereinthe light-transmitting resin contains power of a red fluorescentmaterial; allowing the power of the red fluorescent material toprecipitate toward the bottom surface in the light-transmitting resinfor a predetermined time; hardening the light-transmitting resin afterthe predetermined time passes; and forming a light-transmitting resinlayer on the hardened light-transmitting resin, the light-transmittingresin layer containing power of a green fluorescent material.
 15. Themethod according to claim 14, wherein the red fluorescent material andthe green fluorescent material have mutually different concentrationdistributions.
 16. The method according to claim 14, wherein the lampbody is provided with a lead connected to the blue light emittingelement, and the lead includes an exposed portion located at the bottomsurface of the recess.
 17. The method according to claim 16, wherein theblue light emitting element is bonded to the exposed portion of thelead.
 18. The method according to claim 14, wherein the blue lightemitting element includes a first side surface and a second sidesurface, the first side surface being perpendicular to a longitudinaldirection of the recess, the second side surface being parallel to thelongitudinal direction, and wherein the hardened light-transmittingresin includes a first portion and a second portion, the first portionbeing in contact with the first side surface, the second portion beingin contact with the second side surface, the first portion being greaterin thickness than the second portion.
 19. The method according to claim14, wherein the light-transmitting resin layer containing the power ofthe green fluorescent material is configured to entirely close theopening of the recess.